Device Design and Reliability of GAA MBCFET

Compared to FinFET, GAA MBCFET has significant structural differences such as nanosheet channel with variable width and dielectric spacer between inner gate and highly doped diffusion region. Nanosheet width and spacer architecture play a crucial role in device performance and enable the design of devices with different advantages and disadvantages in terms of RC delay and power characteristics. In this paper, we overview the impact of MBCFET's unique structures, including nanosheet width and spacer architecture, on device characteristics. In addition to comparing the reliability characteristics of MBCFET to FinFET, we also analyze the reliability impact of MBCFET's unique structures.