$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout

In this paper we present a characterization methodology for on-wafer extraction of on-resistance and threshold voltage by means of pulsed IV, where the transition from off-state (high drain voltage, gate at zero) to measurement phase is tuned to move from soft to hard switching condition. Results demonstrate that: i) RON may show significant increase (with saturation) moving from soft to hard switching; ii) V
TH
is strongly affected by hard switching operation; iii) improved passivation process results in lower on-resistance increase with marginal effect on the V
TH
shift; iv) gate field plate length significantly impacts R
ON
increase, thanks to the management of the electric field in the access region, with marginal effect on the V
TH
shift.