Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress

This paper introduces a novel three-dimensional approach to model threshold voltage variation
$(\mathbf{\Delta} \boldsymbol{V}_{\boldsymbol{th}})$
during time-dependent dielectric breakdown (TDDB) stress of SiC trench MOSFETs in a wide temperature range
$\boldsymbol{T}=\mathbf{0}\ldots \mathbf{250}{{}^{\circ}\mathbf{C}}$
and studies the processes of
$\mathbf{\Delta} \boldsymbol{V}_{\boldsymbol{th}}$
recovery at room temperature.