Re-consideration of Correlation between Interface and Bulk Trap Generations using Cryogenic Measurement

The interface trap generation under applying stress voltage is caused by hydrogen diffusion subsequent to hydrogen release at MOS interfaces. These released hydrogen atoms also create bulk traps. In this study, the relationship between the interface trap generation and MOSFET degradation under high-voltage F - N stressing at 77 K ~ 300 K. As results, respective
$\Delta \mathrm{D}_{\text{it}}$
and
$\Delta \mathrm{I}_{\text{ON}}$
are suppressed with decreasing temperature irrespective of the stress polarity. However, the correlation between
$\Delta \mathrm{D}_{\text{it}}$
and
$\Delta \mathrm{I}_{\text{ON}}$
is more serious at lower temperature compared to that at higher temperature. It is inferred that the additional degradation mechanism is working at lower temperature region.