Measurement of Aging Effect on an Analog Computing-In-Memory Macro in 28nm CMOS

This paper characterizes the aging effect in an 8T-SRAM-based Analog Computing-In-Memory (ACIM) circuit. The measurement results from a 28nm CMOS test chip show that Hot Carrier Injection (HCI) in the 2T path and Negative Bias Temperature Instability (NBTI) in the current mirrors increase computation errors in ACIM and reduce its power efficiency. In addition, a lower Hamming Weight (HW) of the columns and higher analog input lead to stronger aging degradation.