Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors

Hafnium zirconium oxide (HZO) doesn't meet en-durance requirements for certain applications such as data logging. We introduce aluminum-doped HZO (HZAO)-based metal-ferroelectric-metal (MFM) capacitors integrated in BEoL to improve endurance characteristics. Wake-up characteristics,
$2P_{r}$
and
$2E_{c}$
are studied. Based on measurements under severe conditions, endurance was extrapolated with respect to electric field, temperature, frequency, and MFM area. Outstandingly enhanced endurance of above 10
¹⁵
cycles are predicted. This enables usage of ferroelectric memories for data logging applications.