Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology

This paper investigates the alpha and neutron-induced soft error rate (SER) in SRAMs manufactured with 3 nm bulk gate-all-around (bulk-GAA) process technology. The SER in SRAM of bulk-GAA is maximally 1.56X higher than in the same cell-size SRAM of bulk-FinFET. Moreover, shrinking cell size decreases the SER by a maximum of O.38X in bulk-GAA. The SER of the minimum-size SRAM in bulk-GAA is lower than the SER of the minimum-size SRAM in bulk-FinFET.