Exploring the Potential of InCp Precursor in Plasma-Enhanced Atomic Layer Deposition for High-Performance IZO-TFTs

In this study, thin-film transistors (TFTs) with amorphous indium-zinc oxide (IZO) channel were fabricated by plasma-enhanced atomic layer deposition (PEALD). By optimizing the cyclic ratio of laminated ZnO/In2O3, the IZO-TFTs demonstrated a high field-effect channel mobility ( $\mu $ FE) of 42.19 cm2/V s, a threshold voltage ( ${V} _{\text {th}}$ ) of -0.63 V, and a subthreshold swing (SS) of 0.27 V/decade. Moreover, these TFTs exhibited excellent stability during the accelerated test of positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS). This enhanced stability can be attributed to the reduction of defect states achieved through the structural design of the stacked subsequence.