Facile DUV Irradiated Solution-Processed ZrO2/In2O3 for Low Voltages FET Applications

Prime challenges for device integration in metal-oxide semiconductors are low voltage operations, low thermal budget, and large area stable thin films for high-performance field-effect transistors (FETs). Although more, high equipment costs and device scalability issues remain challenges with thin film processing. Henceforth, here we present fully solution-processed thin indium oxide (In2O3) (
${E}_{g}~\sim ~3.2$
eV) semiconducting film integrated with high-
$\kappa $
(~14.68) ZrO2 dielectric thin film for high-performance FETs. Top gate bottom contact (TGBC) architecture is optimized for driving low voltage operations, whereas a low thermal budget (
$\lt 300~^{\circ }$
C) has been made possible with (~1 min) facile deep-ultraviolet (DUV) (~254 nm) irradiation. Al/ZrO2/In2O3/Pt/SiO2/Si FETs operate well below (~0.5 V), with a high
${I}_{\text {ON}}$
/
${I}_{\text {OFF}}$
ratio (
$\sim 1.1\times 10^{{4}}$
), low subthreshold swing (SS) (~104 mV/dec), threshold voltage (
$\sim -0.3$
V), transconductance (
$\sim 1.44~\mu $
s @ 0.5 V), respectively. The effective field-effect mobility in the linear region is ~44.2 cm2/Vs at
${V}_{\text {DS}} =0.1$
V, and in the saturation region is ~15.0 cm2/Vs at
${V}_{\text {DS}} =0.5$
V, respectively. The interface trap density
$\sim 2.5\times 10^{{12}}$
/eV cm2 for ZrO2/In2O3 was investigated by conductance (G-V) technique, also electrical stress investigations were performed for reliability analysis. The gate leakage current is ~7.05 nA/cm2 at
${V}_{\text {GS}} =1$
V. This work demonstrates the high performance of DUV irradiated solution processed Al/ZrO2/In2O3/Pt thin-film transistor (TFT) structures.