Design of 3.3GHz-3.8GHz 5Watt High Power Amplifier using GaN HEMT Device

This work presents an approach for the design of high power amplifier based on the load-pull measurement data. The transistor is fabricated using 0.4um GaN on silicon carbide (SiC) process and has a maximum available gain of 21 dB at 3.3 GHz. The power amplifier has been designed by using large-signal equivalent circuit model and load pull measurements. In the power amplifier design, the input and the output impedance matching networks are designed to get the optimum gain and power respectively. The power amplifier biased at drain bias of Ids = 200 mA and Vds = 28 V, gives an output power of 5 Watt with gain of 14dB from 3.3 to 3.8GHz