Design of Class-F Power Amplifier for Active Antennas Operating over the UWB regime

A Class F Power Amplifier operating at 10 GHz frequency is presented here for overall improvement of radiated power for 5G/6G communications. The designed power amplifier (PA) consists of gate and drain biasing networks, input and output matching networks and harmonic tuning network. An Ultra-Wide Band (UWB) high-efficiency class-F power amplifier is designed based on the proposed method. A high voltage gallium nitride (GaN) high electron-mobility transistor (HEMT) on a Silicon Carbide substrate is used. A peak drain efficiency of 70.5 % for class-F amplifier is measured at 10 GHz frequency. The class-F amplifier achieves a peak effective radiated power of 39 dBm, and power added efficiency (PAE) is over 50 %.