Analysis of DC Characteristics for Tin Oxide (SnO2) based Thin Film Transistor infused with Nickel Material

This paper presents an investigation into the impact of Nickel on the DC characteristics of a proposed Thin Film Transistor (TFT) reliant on Tin Oxide (SnO2). A thorough analysis is conducted on the changes in the device's drain current after the introduction of Nickel. By examining the VI characteristics of the device, the deviation in drain current due to the presence of Nickel is assessed. The results indicate improved current dissipation compared to previously available MOSFETs. On altering/tweaking the thickness of the Tin Oxide (SnO2), intending to be the dielectric medium, variations in the current being transited was analyzed. The highest drain current recorded was 5nm, and the suggested device was enhanced by extending thechannellength to 7 μm, The presence of Nickel has greatly impacted the drain current, thus elevating the same to a levelof above 3.2nm than the existing silicon based MOSFETs'. An improvement current drive of 74% from the existing work has been obtained using this nickel material for the SnO2 based TFT. The responsive VI characteristics of the device shows its inclusivity for detecting the toxicity present in food substances.