Uncooled Operation of Directly Modulated Membrane Laser with Buried Sapphire Layer on Si Substrate

A membrane laser with a buried sapphire layer on Si has 3-dB bandwidths of 40-25 GHz at 25-80°C. The laser demonstrates 80-Gbit/s PAM4 operations up to 80°C at an energy cost of 0.77 pJ/bit.