Cryogenic Ge-on-Si avalanche photodiodes operating at 1550 nm wavelength

We report the first demonstration of Ge-on-Si APD for 1550 nm wavelength photodetection at the cryogenic temperature down to 11 K, with I
dark
=0.369 μA, R=4.84 A/W and G=1840 at V
bias
= -20.8 V