Low-temperature and hydrogen-free silicon dioxide cladding for next-generation integrated photonics

We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO
2
) films deposited using SiCl
4
and O
2
as precursors. A wide low-loss window from 1260 nm to 1625 nm is achieved at a deposition temperature of 300°C, essential for next generation photonic integrated circuits.