Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In
$_{\mathrm {1-x}}$
GaxAs/ In
$_{\mathrm {1-x}}$
GaxP, In
$_{1-}$
xGax GAA JL FET developed and analyzed for their analog performance at high temperature. In
$_{\mathrm {1-x}}$
GaxAs has a composition of 53% InAs and 47% GaAs with a band gap of 0.75 eV, whereas In
$_{\mathrm {1-x}}$
GaxP and In
$_{\mathrm {1-x}}$
GaxN exhibit a wider band gap of 1.90 eV and 3.2 eV, respectively, and exhibit different analog performance. An analytical model that is temperature-dependent for the drain current of In
$_{\mathrm {1-x}}$
GaxAs, In
$_{\mathrm {1-x}}$
GaxP, In
$_{\mathrm {1-x}}$
GaxN GAA JL FET with mobility variations has also been developed. The ratio of transconductance-to-normalized drain current (gm/I
$_{\mathrm {DS}}$
) is utilized to examine analog properties. This ratio is a crucial measure of analog performance since it reveals the sensitivity and linearity of the device. All device parameters such as transconductance (g
$_{\mathrm {m}}$
), gm/IDS, cut-off frequency, and intrinsic gain were investigated for higher temperatures ranging from T =300 K to T =500 K. The newly developed device parameters have very low-temperature sensitivity, making these three material devices potential candidates for high temperature applications.