Elementary Theoretical Model of Thermal Breakdown Generation in Semiconductor Film

It is proposed an elementary theory of thermal breakdown of functional element in electrical circuit. It is represented in the form of the film on the basis of semiconductor material. The theory is based on a simple mathematical model which takes into account the balance of heat between thermal channels originated temperature deviations. Each of them is a self-consistent heat source due to an electric current flowing through the film. Such channels located perpendicular to the film. The positive feedback between the heating of the thermal channel and the current growth in it leads to super-fast growth of the temperature in such a channel up to the melting temperature. Such an evolution process is interpreted as a thermal breakdown of the material. It leads to the formation of melting channels with small diameter which are directed through the film. In turn, it leads to degradation of the electrical properties of the material.