Fabrication of Copper Indium Gallium Diselenide (Cu(In,Ga)Se2) Thin Film Solar Cell

Summary

The copper indium gallium diselenide (CIGS)–based solar cell structure consists of an absorber layer of CIGS, a buffer layer of cadmium sulfide (CdS), and then a window layer of intrinsic zinc oxide (i‐ZnO) and Aluminium doped zinc oxide (Al‐ZnO). In this chapter, the influence of the thicknesses of i‐ZnO and CdS layer is explained for CIGS solar cell. Also, the influence of flash evaporated CdS and the thermally evaporated CdS are studied. A typical device structure of CIGS thin solar cell is shown. The fabrication part of CIGS solar cell includes the layer by layer growth on a glass substrate. In CIGS solar cell, the junction between CIGS and CdS plays the crucial part in carrier generation and the recombination process. The performance of fabricated CIGS solar cell has been observed by the current‐voltage (I‐V) measurements and the spectral response measurements.