GaN High Electron Mobility Transistor Device Technology for RF and High‐Power Applications

Summary

The High Electron Mobility Transistors (HEMTs) are the highest capable devices for millimeter and sub‐millimeter wave application. The basic principle of HEMT devices is the heterostructure with modulation doping. This chapter describes an emerging GaN‐based HEMTs device technology appropriate for Radio Frequency and high‐level power applications. In the last few decades various HEMTs device structures have been adopted to enhance the DC and RF performance. Also, it offers a huge amount of two‐dimensional electron gas carrier density approximately 6 × 10¹³ cm^‐2 as compared to InP and GaAs based HEMTs device. Various impacts like barrier layer thickness, field plate techniques, parasitics, passivation, and polarization affecting the DC and RF performance of GaN‐based HEMTs are described in detail. Further, the field plate technique plays an important task in enhancement of the HEMT devices power densities.