Embedded Flash and EEPROM for Smart IoT

Summary

Embedded Flash memory and electrically erasable programmable read only memory (EEPROM) have been developed for most of the Internet of Things' (IoT's) applications. Many of these embedded nonvolatile memories are available from the various foundries for logic integrated circuits (ICs). This chapter first covers single polysilicon CMOS logic process‐compatible floating gate Flash and EEPROM. Embedded Flash cells can be made using only the CMOS logic transistors that exist in the standard CMOS process without process changes. Logic eNVM is commonly substituted for embedded Flash due to a faster time to market, logic compatibility, and the cost effectiveness of power management for multiple‐time programmable (MTP) solutions. The 5 T eFlash memory cell structure was the most attractive option for logic‐compatible eNVM. Embedded charge trapping memories are in production at several manufacturers and the technology is also widely expected to be used in standalone vertical memories. The chapter discusses production examples followed by technology development.