Thin Film Polymer and Flexible Memories

Summary

Flexible electronics is important for Internet of things (IoT) applications due to its low weight, high portability, low fragility, and options for variable structure. Use of the resistance RAM (RRAM) for IoT applications is discussed in terms of process variation produced performance and yield limitations. Inorganic thin film RRAMS have the potential for integration on flexible substrates with a low voltage read and multilevel operation. Organic RAMs can be based on various organic materials such as polymers or polymer composites containing nanoparticles (NP). Various universities and labs have investigated properties of copolymer and terpolymer ferroelectric memories in low cost flexible transparent circuitry. Ultrathin BaTiO₃ ferroelectric tunnel junctions (FTJs) were studied in 2015 by the National University of Singapore and Trinity College Dublin using interface engineering. Using silicon‐on‐insulator (SOI) wafers to create thin layers of memory chips has the advantage of having a thin film of single crystalline silicon, which is compatible with full CMOS.