A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor

In this study, we present a one-transistor-one-memristor (1T1M) programmable artificial spiking neuron, achieved through the integration of a Hf0.5 Zr0.5 O2 ferroelectric transistor (FeFET) and a NbOx Mott memristor. The FeFET’s threshold voltage, configurable by a gate write pulse (
${V}_{\textit {pulse}}$
), exhibits excellent retention properties, enabling the storage of data in multiple states. Simultaneously, the NbOx Mott memristor, characterized by threshold switching and high stability, is driven by the FeFET, allowing for the generation of diverse spike rates corresponding to the storage states of the FeFET. Consequently, a programmable artificial spiking neuron is realized, with its states precisely configured by
${V}_{\textit {pulse}}$
to accurately transmit the encoded neuromorphic spikes. This achievement lays the groundwork for the development of spiking neural networks (SNNs).