An extended Gummel-Poon model for an extreme range of temperature

An extended Gummel-Poon model qualified for extreme temperature requirements (-40/spl deg/C/spl les/T/spl les/150/spl deg/C) is presented. Comparing measurements and SPICE calculations of a bipolar transistor, the improvement of the modified model is demonstrated. The physical parameters determining the current gain characteristics are discussed.