Field Effect Transistors

Summary

This chapter contains sections titled:

• Introduction
• Operation Principles of Heterojunction Field Effect Transistors
• GaN and InGaN Channel HFETs
• Equivalent Circuit Models: De‐embedding and Cutoff Frequency
• HFET Amplifier Classification and Efficiency
• Drain Voltage and Drain Breakdown Mechanisms
• Field Plate for Spreading Electric Field for Increasing Breakdown Voltage
• Anomalies in GaN MESFETs and AlGaN/GaN HFETs
• Electronic Noise
• Self‐Heating and Phonon Effects
• HFET Degradation
• HFETs for High‐Power Switching
• Appendix 9.A. Sheet Charge Calculation in AlGaN/GaN Structures with AlN Interface Layer (AlGaN/AlN/GaN)
• Further Reading