Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can cause fluctuations in the on-resistance and gate threshold voltages. These phenomena affect the long-term reliability of power conversion circuits. The proposed condition monitoring function detects the degradation of the gate oxide by measuring the input capacitance
$C_{\mathrm{iss}}$
versus the gate–source voltage
$v_{\mathrm{GS}}$
characteristics (
$C_{\mathrm{iss}}$
–
$v_{\mathrm{GS}}$
characteristics) of SiC MOSFETs implemented in power conversion circuits. Experiments on the proposed gate drive circuit were conducted using a 400 W-rated buck converter circuit in which a SiC MOSFET is implemented. The experimental results show that the gate drive circuit is capable of online measurement of
$C_{\mathrm{iss}}$
–
$v_{\mathrm{GS}}$
characteristics and gate drive at 20 kHz. The online measurement of the
$C_{\mathrm{iss}}$
–
$v_{\mathrm{GS}}$
characteristics corresponds to the offline measurement with a measurement instrument, indicating the effectiveness of the gate drive circuit.