Transistor Matrix Array for Measuring Variability and Random Telegraph Noise at Cryogenic Temperatures

Addressable transistor arrays using 65 nm bulk technology were fabricated and tested at cryogenic temperatures. It was confirmed that variability at 1.5 K slightly degrades compared with 300 K. Random telegraph noise (RTN) was also measured and existence of extremely slow RTN at 1.5 K was confirmed using a quasi-parallel measurement technique. Such test structures will be particularly useful for enhancing cryogenic measurement efficiency.