Impedance Measurement Platform for Statistical Capacitance and Current Characteristic Measurements of Arrayed Cells with Atto-order Precision

A novel impedance measurement platform that enables high-precision statistical measurements of C-V and I-V characteristics is presented. The platform consists of 366
^H
× 228
^V
cell array and a common readout circuit. The pre-formed device under test (DUT) cells of metal-oxide-silicon field-effect-transistors (MOSFETs) and metal-insulator-metal (MIM) capacitors were measured to verify its measurement performance. The results demonstrated that for about 5,000 DUTs, fF-order capacitance with 0.05 % precision and fA-order current with 0.46 % precision were achieved by C-V and I-V measurements, respectively.