Test Structures for studying the impact of the backend contact metallization on the performance and stress sensitivity of SiGe HBTs

Based on a collection of layout realizations of a simplified SiGe HBT test structure, this paper addresses the impact of mechanical stress induced by the backend metallization placed above the base, emitter and collector regions on the electrical performance of these HBTs. Subsequently, the temperature dependencies of the collector currents and their sensitivity to externally applied mechanical stress is investigated. This study provides valuable insights into test structure layout-related performance shifts relevant for layout and design of modelling test structures and high-precision circuit design.