A simple model for the determination of I/sup 2/L base current components

Assuming uniform impurity and mobility profiles and a trapezoidal minority carrier distribution a simple structure-oriented model for an upward-operated I/SUP 2/L n-p-n transistor has been derived which accurately describes its DC properties. Its validity is demonstrated with reference to some examples. With the aid of this model it is now possible to determine the various base current components by measuring the collector current I/SUB c/ (V/SUB be/), the base current I/SUB b/(V/SUB be/), and the recollection current I/SUB rec/(V/SUB be/) directly at the I/SUP 2/L gate without the need of special test structures.