Modeling the VCM‐ and ECM‐Type Switching Kinetics

Summary

This chapter deals with the state‐of‐the‐art modeling of VCM‐ and ECM‐type devices with special emphases on the nonlinear dynamics of the switching process. The physical processes that lead to this nonlinearity – ion migration, charge‐transfer reactions, and nucleation – are discussed in general. The presented models comprise different simulation approaches with respect to length and timescale, ranging from ab initio to compact modeling. Whereas predictive models for ECM devices are available, a comprehensive VCM model is missing. With respect to nonlinearity, the ECM switching kinetics are electric field/potential‐dependent and can be modeled by ion migration, electron‐transfer reactions, and nucleation. In contrast, the nonlinear switching kinetics of VCM cells are achieved by both electric‐field and temperature enhancement due to local Joule heating.