A 40 ns CMOS E/SUP 2/PROM

New high-performance CMOS circuit techniques have been developed and used to build an 8K E/SUP 2/PROM with an access time of 38 ns at 5 V. Using standard CMOS/SOS technology, the device dissipates only 0.8 mW quiescent power at 5 V and 60 mW at 1 MHz. A midpoint precharge and sense technique permits operation form a supply voltage of 4-12 V.