Low-Frequency Noise in InGaAs-OI Transistors

The III-V compounds have recently attracted high expectation due to their potential to relieve semiconductor scaling constraints. Scaled indium gallium arsenide (InGaAs) transistors have recently proved to operate as single-transistor dynamic random access memory (DRAM) exploiting the floating-body effect, enabling getting rid of the external capacitor and minimizing the cell footprint. However, extensive characterization of the interface quality and disturbing mechanisms affecting the device operation are still required. This work addresses the low-frequency noise characterization of these III-V InGaAs transistors focusing on their DRAM operation. The experimentally extracted power spectral density of current follows a flicker-noise characteristic which points to carrier number fluctuations as the main noise source. However, mobility degradation associated with trapping-detrapping carrier phenomena has also to be taken into account to model the device operation. Finally, the device dimension and the back-gate bias dependence on the effective trap density have been evaluated.