Nonlinear Performance of Monolithically Integrated Scaln-Based Ghz Acoustic Filters With Rfsoi Switches

In this work, a comprehensive nonlinear characterization, including the 2nd order harmonic emission (H2) and the 3rd order intermodulation distortion (IMD3), has been performed on the monolithically integrated acoustic filters and RFSOI switches. The Sc
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Al
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N-based acoustic filters were fabricated vertically above an 8-inch RFSOI wafer. The standalone filters with different relative locations, switches and modules composing of a filter and a switch, have been characterized to evaluate the impact of the monolithic integration on the nonlinear performance of these devices. Results show that around 10 dB increase in the in-band H2 response was induced by the monolithic integration. As for the IMD3 response, the monolithic integration doesn’t introduce a significant impact and the 3rd order intermodulation intercept point (IIP3) of +32 dBm can be achieved with the monolithically integrated RF module.