Stress Induced Gap Closing Electrodes for Silicon Resonators Enabling Low Bias Voltage and Equivalent Resistance

This work presents stress induced gap closing electrodes for silicon resonators intended to reduce the resonator-to-electrode gaps to achieve significant bias voltage and motional resistance reduction for the first time. The motional resistance of the resonator is reduced to approximately 2% when the gap reduces from 1.3 μm to 500 nm. Sub-100 nm gaps are obtained. Since the gaps are equal to the difference between the initial driving and stop gaps, the errors caused by process variations are also compensated.