Electrochemical Seismometer Based on One Single Silicon Chip With Four Electrodes

This paper reports a MEMS-based electrochemical seismometer based on one single silicon chip with four electrodes. This electrode chip that integrates four electrochemical reaction electrodes on single silicon wafer has the advantages of simple fabrication and good production consistency. In the production process, the DRIE is used to make 1197 large aspect ratio through silicon vias (TSVs) with diameter of 60um and depth of 500um within circular area of 5mm diameter, and an inclined sputtering method is used to make electrodes, which can obtain large reaction cathode area and suitable fluid resistance. The MEMS electrochemical seismometers using this electrode chip have features of high sensitivity, large bandwidth and low noise level.