BEOL Compatible (< 400 °C) Novel Cross-Point RRAM Based Resistive Hydrogen Sensor for Downstream Hydrogen Use

We present a novel Pd/Ta
2
O
5
/TiW cross-point resistive random-access memory (RRAM) based hydrogen gas (H
2
) leakage sensor with a low thermal budget (< 400 °C). This cost-effective, low power cross-point RRAM device with Pd sensing electrode and atomic layer deposited (ALD) Ta
2
O
5
layer enables faster response time (t
90%
~ 5 sec for 2 vol.% H
2
) at room temperature for any back end of line (BEOL) compatible (< 400 °C) RRAM-based H
2
sensor. It does not require the warm-up and oxidation of insulator (Ta
2
O
5
) layer prior to the H
2
detection, indicating its high potential for hydrogen leakage sensor applications.