Optimized PNP ESD Protection Device With Adjustable Trigger and Holding Voltages for High-Voltage Applications

We demonstrate a PNP electrostatic discharge (ESD) protection device with adjustable trigger and holding voltage, proposed and verified in a 0.18-
$\mu \text{m}$
BCD process for 8–65-V applications. Due to the presence of P+-S/D-implant (P+), p-body for NLDMOS (HVPB), and high-voltage p-Well (HVPW) as the collector, the trigger voltage (
${V} _{t\,{1}}$
) and holding voltage (
${V} _{h}$
) of PNPs can vary from 12.8 to 47.6 V. Additionally, the emitter-to-collector width of PNPs, denoted as
${D}1$
,
${D}2$
,
${D}3$
, and
${D}4$
, strongly affects
${V} _{t\,{1}}$
and
${V} _{h}$
. The low beta gain (
$\beta $
) of these PNPs results in a no-snapback TLP I–V characteristic. This is an effective configuration for high-voltage applications with latch-up immune, area efficient, and robust.