A Multi-Level Driver for Switching Trace Regulation Method of SiC MOSFET

SiC MOSFET has small on-resistance, low switching losses, high switching frequency, high withstand voltage values, and excellent reverse recovery characteristics. Excessively fast switching speeds of the SiC devices can lead to severe switching overshoot, oscillations, and crosstalk. These negative effects affect the application prospects of SiC devices. In this paper, a multi-level driver(MLD) for SiC MOSFET and regulation method for switching trace are proposed, which addresses the co-optimization of multiple objectives of the switching trace. It not only ensures switching speed and low switching loss, but also effectively suppresses overshoot and oscillation. The feasibility and effectiveness of the designed multi-level driver are verified using double-pulse test.