Efficient EV Charging using Optimal DC-DC DAB 400 V to 115 V with GaN GS66508T

This research aims to develop an efficient dc-dc dual active bridge (DAB) converter circuit for charging electric vehicles (EVs) from 400 V to 115 V, focusing on improving efficiency and optimizing design using GaN transistors. The selection of GaN transistor GS66508T, a 650 V enhancement mode power transistor with superior specifications, such as RDS(on) 50 mΩ, IDS(max) 30 A, the need for simple gates (0 V to 6 V), transient-resistant gates (-20 / +10 V), and very high switching frequencies (> 10 MHz), took center stage in finding effective solutions for faster and more efficient EV charging. The successful implementation in the simulation design of the DAB dc-dc converter resulted in optimal performance with a stable output voltage at 113.8 V, an output current of 12.4 A, an output power of 1410.67 W, and an overall efficiency of 97.46%, strengthening the reliability and efficiency of DAB designs for charging electric vehicles.