A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching

We introduce a non-volatile ternary content-addressable memory (nv-TCAM), composed of 1 metal-ferroelectricmetal (MFM (1C)), 1 control-transistor (1T), and 1 metalinsulator-metal (MIM (1R)). The MFM gating a transistor provides the functionality of the “Care” or “Don’t-care”; meanwhile, the MIM in connection of the drain of the transistor stores a datum to be searched. Results show that the MFM can be cycled 10
¹⁰
times, and the MIM is up to 10
⁶
times. Moreover, a datum can be kept in the MFM and MIM at 91 ° C and 129 °C for predicted 10-year lifetime, respectively. The readout window for the searching bit-“1” / “0” is 0.66 V and 0.8 V, respectively. The searching time is ~9 ns with an averaged 22.8 μW of power.