Write Error Rates of Field-Assisted Spin-Orbit-Torque Switching of Perpendicular Magnetic Tunnel Junctions

Switching phase-diagram and write error probabilities are studied via macrospin simulations at 0K and 300K for a perpendicular magnetic tunnel junction switched by spin-orbit-torque. Optimum switching conditions are obtained for varying charge current, in-plane magnetic field, and relative strength of field-like torque over damping-like torque. Results show non-monotonic variation in switching probabilities with write current and the assist field strength. Impact of non-zero rise/fall time of the current pulse on the switching are also discussed.