High-Speed Electrical Transient Thermometry of Monolayer MoS2

Self-heating greatly limits performance of devices based on two-dimensional (2D) materials. Here, we present a novel high-speed thermometry method for 2D semiconductor devices. Utilizing nanosecond pulsed measurements, at timescales shorter than the device thermal time constant, we probe transient self-heating in monolayer MoS
2
transistors. We measure temperature-dependent thermal resistance of 2D semiconductor devices, extracting the thermal boundary conductance of monolayer MoS
2
in a wide temperature range. Our results offer insights into 2D materials thermal interfaces.