Exploration of Solution Processed OFETs with Poly (4-vinyl phenol) (PVP) / Poly (3-hexylthiophene-2,5-diyl) (P3HT) interface for Synaptic Behavior Emulation

This paper presents the investigation for memory capabilities of organic transistors with a PVP/P3HT dielectric-semiconductor interface. Fabricated p-channel devices on rigid silicon substrate operated at -20 V and exhibited excellent electrical stability and environmental resilience. Furthermore, these transistors with PVP/P3HT displayed short term memory (STM) capabilities in the presence of optoelectronic stimuli. The results indicate promising potential for this dielectric semiconductor combination in synaptic transistors for organic and flexible electronics applications.