Design of High Isolation Low Loss MEMS Ohmic Switch for Radio Frequency Applications

In this work, three vertical electrostatic RF-MEMS (Radio Frequency Micro Electro-Mechanical Switch) switch designs with shunt ohmic configurations and control voltages of approximately 13 V are proposed. We have examined the switch’s performance across a broad frequency range, from 1 to 100 GHz. With an isolation factor of -27.8 dB (at 100 GHz) and an insertion loss in the range of -0.02 to -0.27 dB (for 1-100 GHz frequency), the simulation results demonstrate exceptionally good radio frequency characteristics.