Enhanced Polarization, Endurance, and Long Retention in Low Temperature Processed W/Hf0.5Zr0.5O2/W Ferroelectric Capacitor for Back-End-of-Line Integration

Low thermal budget of Atomic Layer Deposited Hf
0.5
Zr
0.5
O
2
(HZO) ferroelectric capacitors have been studied for memory applications. Annealing time $(\mathrm{t}_{\mathrm{anneal}})$ has been varied in a Rapid Thermal Process as a crystallization method of the HZO film. W/HZO/W capacitors were fabricated and annealed at 450°C in N
2
with various $\mathrm{t}_{\mathrm{anneal}}$. Consequently, very high remnant polarization $\sim 62 \mu \mathrm{C}/\mathrm{c}\mathrm{m}^{2}$ with low coercive field $(2\mathrm{E}_{\mathrm{c}}\sim 2.28\mathrm{M}\mathrm{V}/\mathrm{c}\mathrm{m})$, robust endurance and long retention were realized by increasing $\mathrm{t}_{\mathrm{anneal}}$.