High quality PVD-MoS2 film on plasma-ALD-SiO2 underlaying material for CFET integration

PVD-MoS
2
film on various underlaying materials for a CFET was investigated. It is confirmed that the chemical composition ratio and crystallinity of MoS
2
films are significantly affected by the type of underlying material. A high-quality MoS
2
film was obtained on a plasma-ALD (Atomic-Layer Deposition) SiO
2
film. This result can guide the application of MoS
2
in future electronic systems such as the CFET.