Comparison of crack resistance of two SiC MOSFETs gate geometries under short-circuit by FE simulations

In this paper, a comparison between two 600 V SiC MOSFET transistor with different gate geometries is realised. An electro-thermo-mechanical model done on Sentaurus TCAD and ANSYS Mechanical is used for this comparison. The top corner cracking of oxide’s gate is chosen to determine the best geometry to withstand a short-circuit. Finally, it is found that one of the geometry could prevent those cracks and, by so, should better resist to short-circuits.