On the Prevalence of Row Hammer Attacks in FeFET Based Memory Systems

In this study, we explore the prevalence of Row Hammer attacks in FeFET-based memory systems. We introduce an analytical model derived from measured data to predict the drift in the programmed threshold voltage state under a given electrical pulse excitation. The results of our research present an efficient means of evaluating the security of FeFET-based memory systems and offer practical guidelines for their optimization.