Impact of Doping CsPbBr3 with Organic Iodide Salts on Memory Performance

This template has been tailored for output on A4- or letter-sized paper. The intriguing memory effect in CsPbBr
3
perovskite is of interest in materials science and electronics. By substituting 20% of CsBr with organic-iodide salts resulted in smoother perovskite films. These mixed perovskite phases, with diverse cations and anions, altered band-edge characteristics and luminescence signals. Electrical properties, such as current voltage and resistance, exhibited an ohmic response influenced by voltage. Additionally, impedance behavior indicated reduced charge accumulation with phenylethylammonium iodide, attributed to larger cations and multiple halogen atoms, promoting more conductive channels. These findings open avenues for tailored memory and electronic applications in CsPbBr
3
perovskite-based devices.