Exploring Phase and Bandgap Variations in Gallium Oxide Using Mist-based Chemical Vapor Deposition System

The present research demonstrates a thermally stable Kappa-phase Gallium Oxide (K-Ga
2
O
3
) using an affordable Mist Chemical Vapor deposition system (MIST-CVD). A systematic growth approach has been used, which shows that the K-Ga
2
O
3
is stable at high temperatures with other polymorphs of the Ga
2
O
3
family on Sapphire Substrate. Further, the structural, morphological, and optical properties of Ga
2
O
3
films have been investigated using XRD, FE-SEM, EDAX, UV-Vis, and Raman measurements.